| PART |
Description |
Maker |
| MX23C3210 MX23C3210MC-10 MX23C3210MC-12 MX23C3210M |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM 2M X 16 MASK PROM, 120 ns, PDSO44
Transformers Only Module 2M X 16 MASK PROM, 100 ns, PDSO44
CAP 33UF 25V 35V TANT SMD-7343-31 TR-7 LOWESR-200
|
PROM
Macronix International Co., Ltd.
|
| MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000M |
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
| MX23L4100 MX23L4100MC-10 MX23L4100MC-12 MX23L4100M |
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 100 ns, PDSO40
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 120 ns, PDIP40
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
512K-Bit CMOS Flash Memory
Bulk Erase Flash Memory, 512Kb
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http://
CATALYST[Catalyst Semiconductor]
|
| MX23L3214XI-10 MX23L3214TI-90 |
32M-BIT MASK ROM 2M X 16 MASK PROM, 100 ns, PBGA48
32M-BIT MASK ROM 2M X 16 MASK PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| MX23L6410YC-10 |
64M-BIT (8M x 8 / 4M x 16) Mask ROM 4M X 16 MASK PROM, 100 ns, PDSO44
|
Macronix International Co., Ltd.
|
| W29EE512P-70B W29EE512Q-70B W29EE512Q-90 W29EE512P |
BOX 2.53X1.73X.65 W/3 BTNS ALMOND
64K X 8 CMOS FLASH MEMORY 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
64K X 8 CMOS FLASH MEMORY 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40
4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
| SST29EE512-70-4I-EHE SST29EE512-70-4C-EHE SST29EE5 |
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
http://
Silicon Storage Technology, Inc.
|
| MX23L8103TC-70 MX23L8103TC-90 |
8M-BIT MASK ROM 512K X 16 MASK PROM, 70 ns, PDSO48
8M-BIT MASK ROM 512K X 16 MASK PROM, 90 ns, PDSO48
|
Fujitsu, Ltd.
Macronix International Co., Ltd.
|
